Laboratoire de Semi-conducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta DIOP, Dakar, Sénégal.
* Corresponding Author
ORCID Details
Mountaga BOIRO: https://orcid.org/0009-0001-9742-2220
Mamadou Yacine BA: https://orcid.org/0009-0006-2423-2713
Dibor FAYE: https://orcid.org/0009-0000-2905-4406
Mamadou Bamba SENE: https://orcid.org/0009-0002-8193-9169
Amadou DIAO: https://orcid.org/0000-0002-7658-6293
World Journal of Advanced Research and Reviews, 2026, 32(01), 1068–1073
Article DOI: 10.30574/wjarr.2026.32.1.2653
Received on 09 September 2026; revised on 15 October 2026; accepted on 17 October 2026
Within the framework of phenomenological studies, this research highlights the Bode and Nikyste diagrams of the diffusion coefficient as a function of the resonance frequency and the cutoff frequency. We determined the expression of the complex diffusion coefficient Dn* as a function of the excitation frequency and the magnetic field. Since the diffusion coefficient is a recombination parameter that models the cell’s ability to diffuse carriers within the material, we identified three behaviors of the solar cell resistive, inductive, and capacitive during the diffusion process
Bode’s diagram, Nyquist’s diagram, Cut-off frequency, Resonance frequency, Magnetic field, Photovoltaic cell, Vertical series junction
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Mountaga BOIRO, Mamadou Yacine BA, Dibor FAYE, Mamadou Bamba SENE and Amadou DIAO. PHENOMENOLOGICAL STUDY OF THE DIFFUSION COEFFICIENT OF A SERIES VERTICAL JUNCTION SILICON SOLAR CELL. World Journal of Advanced Research and Reviews, 2026, 32(01), 1068–1073. Article DOI: https://doi.org/10.30574/wjarr.2026.32.1.2653