Analysis of the capacitance of a vertical-junction photocell under polychromatic illumination: Influence of temperature and depth

This study analyses the capacitance of a series-connected silicon vertical-junction photocell exposed to polychromatic illumination, by incorporating the influence of temperature and depth. Based on the diffusion and recombination model of minority carriers in the cell base, the continuity equation is solved while accounting for the temperature dependence of the diffusion length, carrier lifetime and photovoltage. The simultaneous study of depth and temperature provides a better understanding of the capacitive behaviour under real conditions, with the aim of optimizing the energy efficiency of photovoltaic cells.