A SILICON SOLAR CELL ILLUMINATED BY LARGE Λ WAVES AT ITS EMITTER, AT TEMPERATURE AND IN A STATIC REGIME: XCO IS INVESTIGATED ON THE EXCESS MINORITY CHARGE CARRIERS’ DENSITY BASIS AND THE CAPACITANCE

This work is carried out on the excess minority charge carriers density basis in the base, δ(x), obtained from the continuity equation solution. The latter involves modelling the phenomena that arise when long wavelengths λ Illumination is emitted from our n+/p/p+ type solar cell at temperature T, under static regime. Using the (x) expression, the excess minority charge carriers relative density in the base versus depth x in the base is plotted. The maximum of this relative density, projected onto the x-axis, is denoted by X. As we are considering the case where the solar cell is in an open-circuit condition, X is denoted by Xco. This is also referred to as the space charge region thickness or  width when the solar cell is in an open-circuit condition. As the solar cell is at a high temperature and high , then Xco corresponds to Xco(T, high). The solar cell capacitance expression is derived from those for (x) and the photovoltage Vph. Based on the neperien logarithm graph of capacitance against the temperature neperien logarithm, Xco(T, high) is investigated.