SILICON MONOFACIAL SOLAR CELL, ILLUMINATED BY LONG WAVELENGTHS ON (N+) AND UNDER TEMPERATURE, IN STATIC REGIME: SPACE CHARGE ZONE THROUGH CAPACITANCE AND SHORT-CIRCUIT CAPACITANCE DETERMINATION.

The monofacial silicon solar cell, under temperature in a static regime, is illuminated on the (n+) emitter by long wavelengths. From the continuity equation (which describes the phenomena established in the solar cell base (p) when the latter is illuminated), the excess minority carrier density expression in the base is established. The latter allows obtaining the photovoltage through the Boltzmann relation. The emitter-base junction (x = 0) minority carrier density expression and of the photovoltage allow establishing the solar cell capacitance expression. From the latter, the solar cell capacitance profilles the junction recombination velocity, for different temperatures, for different and long wavelengths are represented. From the latter, the space charge region behavior is studied. The space charge region (SCR) is planar capacitor modeled. The solar cell capacitance expression also allows representing the photovoltage versus solar cell capacitance natural logarithm profiles, for different temperatures, for different et long wavelengths. From these, the solar cell capacitance values when it is under short-circuit condition are extracted.