Influence of the magnetic field on the shunt resistance of an n+p-p+ silicon solar cell in the frequency modulation
1 Semiconductors and Solar Energy Laboratory, Cheikh Anta Diop University, Dakar, Senegal.
2 Solid State Physics and Materials Sciences Laboratory, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal.
Research Article
World Journal of Advanced Research and Reviews, 2024, 23(02), 1277–1284
Publication history:
Received on 23 June 2024; revised on 08 August 2024; accepted on 10 August 2024
Abstract:
A photovoltaic cell is a device that generates electricity directly from visible light. Several factors affect the conversion efficiency of solar cells. Parasitic resistances such as the shunt resistance is a fundamental parameter of the equivalent electrical model of the solar cell, which induces the leakage current of electrical charges when its value is low. It represents all leakage currents within the solar cell. It is also an indicator of good or poor quality of a solar cell, since a high value indicates low leakage current through the cell, and vice versa. A number of measurement techniques are used to determine the leakage current, in particular electrical current and voltage.
Keywords:
Solar Cell; Magnetic Field; Shunt Resistance; Series Vertical Junction
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